1123 - 功率半導體元件

Power Semiconductor Devices

教育目標 Course Target

本課程內容規劃旨在建立學生對功率半導體元件的完整理解,從基礎半導體物理出發,逐步引導至元件結構設計與應用分析,並結合業界實務經驗,培養學生具備元件選擇、規格解讀與應用設計的能力。
課程初期將聚焦於半導體物理基礎,包括載子傳輸機制、PN 接面行為、MOSFET 的操作原理與崩潰機制等,奠定元件設計所需的物理基礎。中段課程將深入探討各類功率半導體元件的設計與特性,包括功率二極體、金氧半場效電晶體…等等,並分析其導通特性、切換行為、損耗機制與熱設計考量。後段課程將延伸至新型元件架構與材料技術,如SGT MOSFET、CoolMOS…等結構,以及寬能隙材料元件(SiC、GaN)之設計原理與應用挑戰,使學生掌握功率元件技術的發展趨勢。
此外,課程將強調理論與實務的結合,透過業界產品的 datasheet 解讀、元件規格分析、實際應用電路的設計考量與案例研討,讓學生理解功率元件在電力電子系統中所扮演的角色與選選擇。學生將透過課堂講授、產品分析、分組討論與期末報告,培養從物理原理到應用設計的整合能力,為未來進入半導體或電力電子相關產業奠定紮實基礎。

The content planning of this course aims to establish students' complete understanding of power semiconductor components. It starts from basic semiconductor physics and gradually leads to component structure design and application analysis. It is also combined with practical experience in the industry to cultivate students' abilities in component selection, specification interpretation and application design.
The course will focus on the basics of semiconductor physics at the beginning, including carrier transport mechanism, PN junction behavior, operating principle and collapse mechanism of MOSFET, etc., to lay the physical foundation required for component design. The middle part of the course will delve into the design and characteristics of various types of power semiconductor components, including power diodes, metal oxide semi-field effect transistors, etc., and analyze their conduction characteristics, switching behavior, loss mechanisms and thermal design considerations. Later courses will be extended to new component architectures and material technologies, such as SGT MOSFET, CoolMOS... and other structures, as well as the design principles and application challenges of wide bandgap material components (SiC, GaN), allowing students to grasp the development trends of power component technology.
In addition, the course will emphasize the combination of theory and practice. Through datasheet interpretation of industry products, component specification analysis, design considerations of practical application circuits, and case studies, students will understand the role and selection of power components in power electronic systems. Through classroom lectures, product analysis, group discussions and final reports, students will develop their ability to integrate from physical principles to application design, laying a solid foundation for future entry into semiconductor or power electronics-related industries.

參考書目 Reference Books

自編數位教材
參考書目:
1. B. J. Baliga, Fundamentals of Power Semiconductor Devices (2nd Edition),
Springer, 2018.
2. B. J. Baliga, Wide Bandgap Semiconductor Power Devices, Woodhead
Publishing, 2018.

Self-compiled digital teaching materials
Bibliography:
1. B. J. Baliga, Fundamentals of Power Semiconductor Devices (2nd Edition),
Springer, 2018.
2. B. J. Baliga, Wide Bandgap Semiconductor Power Devices, Woodhead
Publishing, 2018.

評分方式 Grading

評分項目
Grading Method
配分比例
Percentage
說明
Description
出席率
Attendance
30
期中考
midterm exam
30
期末報告
Final report
40

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課程資訊 Course Information

基本資料 Basic Information

  • 課程代碼 Course Code: 1123
  • 學分 Credit: 0-3
  • 上課時間 Course Time:
    Saturday/2,3,4[HT109]
  • 授課教師 Teacher:
    電機教師
  • 修課班級 Class:
    電機系3,4
  • 選課備註 Memo:
    業師授課。
選課狀態 Enrollment Status

目前選課人數 Current Enrollment: 12 人

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